BSM 400 GA 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance single switch • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 400 GA 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package SINGLE SWITCH Ordering Code C6.
-14-1997 BSM 400 GA 120 DL Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.2 2.5 6.5 2.6 3 V VGE = VCE, IC = 16 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 400 A, Tj = 25 °C VGE = 15 V, IC = 400 A, Tj = 125 °C Zero gate voltage collector current ICES 15 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 400 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance g.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM400GA120DLC |
eupec GmbH |
IGBT-Modules | |
2 | BSM400GA120DN2 |
eupec |
IGBT | |
3 | BSM400GA120DN2S |
eupec |
IGBT | |
4 | BSM400GB60DN2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM400D12P2G003 |
ROHM |
SiC Power Module | |
6 | BSM080D12P2C008 |
ROHM |
SiC | |
7 | BSM100GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
8 | BSM100GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
9 | BSM100GB120DN2K |
Siemens Semiconductor Group |
IGBT | |
10 | BSM100GB170DN2 |
Siemens Semiconductor Group |
IGBT | |
11 | BSM100GB60DLC |
eupec |
IGBT-Module | |
12 | BSM100GD120DLC |
eupec GmbH |
IGBT-Module |