BSM100GAL120DN2 - Siemens Semiconductor Group

BSM100GAL120DN2 IGBT

BSM 100 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package Ordering Code 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70 Symbol Values 1200 12.

Features

Vis - Semiconductor Group 1 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 3.1 2.5 1.5 6 6.5 3.7 3 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C Zero gate voltage collector current ICES 2 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 200 nA VGE = 20 V, VCE = 0 .