BSM100GB120DN2K - Siemens Semiconductor Group

BSM100GB120DN2K IGBT

BSM 100 GB 120 DN2K IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2K Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2107-A70 1200V 145A Symbol Values 1200 1200 Unit V VCE VCGR VGE I.

Features

ristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 1.5 6 6.5 3 3.7 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C Zero gate voltage collector current ICES 2 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 400 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 54 6.5 1 0.5 - S nF - VCE = 20 V, IC = .