BSM 400 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 400 GA 120 DN2 BSM 400 GA 120 DN2 S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C VCE IC Package SINGLE SWI.
http://www.Datasheet4U.com BSM 400 GA 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VGE = VCE, IC = 16 mA Collector-emitter saturation voltage VGE = 15 V, IC = 400 A, Tj = 25 °C VGE = 15 V, IC = 400 A, Tj = 125 °C Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current VGE = 20 V, VCE = 0 V AC Characteristics Transconductance VCE = 20 V, IC = 400 A Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSM400GA120DN2 |
eupec |
IGBT | |
2 | BSM400GA120DL |
Siemens Semiconductor Group |
IGBT | |
3 | BSM400GA120DLC |
eupec GmbH |
IGBT-Modules | |
4 | BSM400GB60DN2 |
Siemens Semiconductor Group |
IGBT | |
5 | BSM400D12P2G003 |
ROHM |
SiC Power Module | |
6 | BSM080D12P2C008 |
ROHM |
SiC | |
7 | BSM100GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
8 | BSM100GB120DN2 |
Siemens Semiconductor Group |
IGBT | |
9 | BSM100GB120DN2K |
Siemens Semiconductor Group |
IGBT | |
10 | BSM100GB170DN2 |
Siemens Semiconductor Group |
IGBT | |
11 | BSM100GB60DLC |
eupec |
IGBT-Module | |
12 | BSM100GD120DLC |
eupec GmbH |
IGBT-Module |