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BSM400GB60DN2 |
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| Part Number | BSM400GB60DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 400 GB 60 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 400 GB 60 DN2 Maximum Ratings Parameter Co... |
| Features |
al Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 6.5
V
VGE = VCE, IC = 9 mA
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V IC = 400 A Tj = 25 °C Tj = 125 °C
Zero gate voltage collector current 2.1 2.2 5 25 2.55 2.65 mA µA 1
ICES
VCE = 600 V, VGE = 0 V, Tj = 25 °C VCE = 600 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
100 22 2.5 1.5 -
S nF -
VCE = 20 V, IC = 400 A
Input capacitanc... |
| Document |
 BSM400GB60DN2 Data Sheet
PDF 127.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSM400GA120DL |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BSM400GA120DLC |
eupec GmbH |
IGBT-Modules |
|
| 3 | BSM400GA120DN2 |
eupec |
IGBT |
|
| 4 | BSM400GA120DN2S |
eupec |
IGBT |
|
| 5 | BSM400D12P2G003 |
ROHM |
SiC Power Module |
|