BSC048N025SG - Infineon

BSC048N025SG Power-Transistor

OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • dv /dt rated • Pb-free .

Features

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• Logic level / N-channel
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant BSC048N025S G Product Summary V DS R DS(on),max ID 25 V 4.8 mΩ 89 A PG-TDSON-8 Type BSC048N025S G Package PG-TDSON-8 Marking 48N025S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain .