BSC046N10NS3G - Infineon

BSC046N10NS3G Power-Transistor

OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application .

Features

• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21 BSC046N10NS3 G Product Summary VDS RDS(on),max ID 100 V 4.6 mW 100 A PG-TDSON-8 Type BSC046N10NS3 G Package PG-TDSON-8 Marking 046N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Co.