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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Verylowon-resistanceRDS(on)@VGS=4.5V
•Optimizedchargesforfastswitching
•OptimizedQGD/QGSforinducedturnonruggedness
•Superiorthermalresistance
•N-channel
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
0.55
mΩ
ID
433
A
Qoss
70
nC
QG(0V..4.5V)
59
nC
PG-TDSON-8
8 7
6
5
5 6
7
8
Pin 1
2 3 4
4 3 2 1
Drain Pin 5-8
Gate
*1
Pin 4
Sour.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSC007N04LS6 |
Infineon |
MOSFET |
|
| 2 | BSC009NE2LS |
Infineon |
Power-MOSFET |
|
| 3 | BSC009NE2LS5 |
Infineon |
MOSFET |
|
| 4 | BSC009NE2LS5I |
Infineon |
MOSFET |
|
| 5 | BSC010N04LS |
Infineon |
Power MOSFET |
|
| 6 | BSC010N04LSI |
Infineon |
MOSFET |
|
| 7 | BSC010NE2LS |
Infineon |
MOSFET |
|
| 8 | BSC010NE2LSI |
Infineon |
MOSFET |
|
| 9 | BSC011N03LS |
Infineon |
Power MOSFET |
|
| 10 | BSC011N03LSI |
Infineon |
Power MOSFET |
|
| 11 | BSC014N03LS |
Infineon |
Power MOSFET |
|
| 12 | BSC014N03LSG |
Infineon |
Power MOSFET |
|