BSC042N03MS G OptiMOS™3 Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications • Superior thermal resistance.
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOMSW for High Frequency SMPS
• 100% Avalanche tested
• N-channel
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Excellent gate charge x R DS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
Product Summary
VDS RDS(on),max
ID
VGS=10 V VGS=4.5 V
30 4.2 5.4 93
PG-TDSON-8
V mW
A
• Halogen-free according to IEC61249-2-21
Type BSC042N03MS G
Package PG-TDSON-8
Marking 042N03MS
Maximum ratings, at T j=25 °C, unless otherwise specified
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC042N03LSG |
Infineon Technologies |
Power Transistor | |
2 | BSC042N03S |
Infineon Technologies AG |
OptiMOS2 Power-Transistor | |
3 | BSC042N03SG |
Infineon |
Power-Transistor | |
4 | BSC042NE7NS3G |
Infineon |
Power-Transistor | |
5 | BSC040N08NS5 |
Infineon |
MOSFET | |
6 | BSC040N10NS5 |
Infineon |
MOSFET | |
7 | BSC046N02KSG |
Infineon Technologies |
Power Transistor | |
8 | BSC046N10NS3G |
Infineon |
Power-Transistor | |
9 | BSC047N08NS3 |
Infineon |
Power-Transistor | |
10 | BSC047N08NS3G |
Infineon |
Power-Transistor | |
11 | BSC048N025SG |
Infineon |
Power-Transistor | |
12 | BSC005N03LS5 |
Infineon |
MOSFET |