BSC047N08NS3G - Infineon

BSC047N08NS3G Power-Transistor

OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC.

Features

• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21 Type BSC047N08NS3 G BSC047N08NS3 G Product Summary VDS RDS(on),max ID 80 V 4.7 mΩ 100 A Package PG-TDSON-8 Marking 047N08NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbo.