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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
4.0
mΩ
ID
121
A
Qoss
52
nC
QG(0V..10V)
43
nC
SuperSO8
8 7 65
56 78
1 23 4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode BSC040N08NS5
Package PG-TDSON-8
Marking 040N08NS
RelatedLinks -
1) J-STD20 and JESD22
Final Data.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSC040N10NS5 |
Infineon |
MOSFET |
|
| 2 | BSC042N03LSG |
Infineon Technologies |
Power Transistor |
|
| 3 | BSC042N03MSG |
Infineon |
Power-Transistor |
|
| 4 | BSC042N03S |
Infineon Technologies AG |
OptiMOS2 Power-Transistor |
|
| 5 | BSC042N03SG |
Infineon |
Power-Transistor |
|
| 6 | BSC042NE7NS3G |
Infineon |
Power-Transistor |
|
| 7 | BSC046N02KSG |
Infineon Technologies |
Power Transistor |
|
| 8 | BSC046N10NS3G |
Infineon |
Power-Transistor |
|
| 9 | BSC047N08NS3 |
Infineon |
Power-Transistor |
|
| 10 | BSC047N08NS3G |
Infineon |
Power-Transistor |
|
| 11 | BSC048N025SG |
Infineon |
Power-Transistor |
|
| 12 | BSC005N03LS5 |
Infineon |
MOSFET |
|