. . . . . 1 Maximum ratings 3 Thermal characteristics .
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
4.0
mΩ
ID
136
A
Qoss
75
nC
QG(0V..10V)
58
nC
SuperSO8
8 7 65
56 78
1 23 4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode BSC040N10NS5
Package PG-TDSON-8
Marking 040N10NS
RelatedLinks -
1) J-STD20 and JESD22
Final Dat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSC040N08NS5 |
Infineon |
MOSFET | |
2 | BSC042N03LSG |
Infineon Technologies |
Power Transistor | |
3 | BSC042N03MSG |
Infineon |
Power-Transistor | |
4 | BSC042N03S |
Infineon Technologies AG |
OptiMOS2 Power-Transistor | |
5 | BSC042N03SG |
Infineon |
Power-Transistor | |
6 | BSC042NE7NS3G |
Infineon |
Power-Transistor | |
7 | BSC046N02KSG |
Infineon Technologies |
Power Transistor | |
8 | BSC046N10NS3G |
Infineon |
Power-Transistor | |
9 | BSC047N08NS3 |
Infineon |
Power-Transistor | |
10 | BSC047N08NS3G |
Infineon |
Power-Transistor | |
11 | BSC048N025SG |
Infineon |
Power-Transistor | |
12 | BSC005N03LS5 |
Infineon |
MOSFET |