·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Vol.
C= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A ; VCE= -5V hFE-2 DC Current Gain IC= -7A ; VCE= -5V COB Output Capacitance fT Current-Gain—Bandwidth Product VCB= -10V; ftest= 1MHz IC= -2A ; VCE= -5V MIN TYP. MAX UNIT -120 V -5 V -3.0 V -2.5 V -0.1 mA -0.1 mA 40 140 15 900 pF 6 MHz hFE-1 Classifications RY 40-80 70-140 isc Website:www.iscsemi.cn .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B673 |
SavantIC |
2SB673 | |
2 | B676 |
ETC |
SILICON POWER TRANSISTOR | |
3 | B600 |
SavantIC |
2SB600 | |
4 | B601 |
NEC |
2SB601 | |
5 | B6010D |
BiTEK |
N-channel MOSFET | |
6 | B6010K |
BiTEK |
N-channel MOSFET | |
7 | B6010S |
BiTEK |
Single N-channel MOSFET | |
8 | B6020S |
BiTEK |
Dual N-Channel MOSFET | |
9 | B605 |
NEC |
2SB605 | |
10 | B60NF06L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | B60NH02L |
STMicroelectronics |
STB60NH02L | |
12 | B6101 |
NEC |
(UPB6100 Series) Bipolar TTL Gate Arrays |