·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VE.
ctor-emitter saturation voltage IC=-10A; IB=-1A VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A ICBO Collector cut-off current VCB=-200V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-2A ; VCE=-5V fT Transition frequency IC=-0.5A ; VCE=-10V Product Specification 2SB600 MIN TYP. MAX UNIT -200 V -5 V -1.5 V -2.0 V -0.1 mA -0.1 mA 20 4 MHz 2 SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SB600 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B601 |
NEC |
2SB601 | |
2 | B6010D |
BiTEK |
N-channel MOSFET | |
3 | B6010K |
BiTEK |
N-channel MOSFET | |
4 | B6010S |
BiTEK |
Single N-channel MOSFET | |
5 | B6020S |
BiTEK |
Dual N-Channel MOSFET | |
6 | B605 |
NEC |
2SB605 | |
7 | B60NF06L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | B60NH02L |
STMicroelectronics |
STB60NH02L | |
9 | B6101 |
NEC |
(UPB6100 Series) Bipolar TTL Gate Arrays | |
10 | B612-2T |
HBControls |
SCR / DIODE Modules | |
11 | B612F-2 |
Crydom |
SCR / DIODE Modules | |
12 | B612F-2T |
Crydom |
SCR / DIODE Modules |