·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD633 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Ts.
wn voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA, IB=0 IC=-3A ,IB=-6mA IC=-7A ,IB=-14mA IC=-3A ,IB=-6mA VCB=-100V, IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IC=-7A ; VCE=-3V 2000 1000 MIN -100 -0.95 -1.3 -1.55 TYP. 2SB673 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V -1.5 -2.0 -2.5 -0.1 -4.0 15000 V V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=-6mA VCC=-45V,RL=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B676 |
ETC |
SILICON POWER TRANSISTOR | |
2 | B679 |
INCHANGE |
Silicon PNP Power Transistor | |
3 | B600 |
SavantIC |
2SB600 | |
4 | B601 |
NEC |
2SB601 | |
5 | B6010D |
BiTEK |
N-channel MOSFET | |
6 | B6010K |
BiTEK |
N-channel MOSFET | |
7 | B6010S |
BiTEK |
Single N-channel MOSFET | |
8 | B6020S |
BiTEK |
Dual N-Channel MOSFET | |
9 | B605 |
NEC |
2SB605 | |
10 | B60NF06L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | B60NH02L |
STMicroelectronics |
STB60NH02L | |
12 | B6101 |
NEC |
(UPB6100 Series) Bipolar TTL Gate Arrays |