The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and ot.
RDS(ON)=90mΩ@VGS=10V RDS(ON)=120mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) ℃TA=25 Maximum Power Dissipation ℃TA=70 Operating Junction Temperature Thermal Resi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B6010K |
BiTEK |
N-channel MOSFET | |
2 | B6010S |
BiTEK |
Single N-channel MOSFET | |
3 | B601 |
NEC |
2SB601 | |
4 | B600 |
SavantIC |
2SB600 | |
5 | B6020S |
BiTEK |
Dual N-Channel MOSFET | |
6 | B605 |
NEC |
2SB605 | |
7 | B60NF06L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | B60NH02L |
STMicroelectronics |
STB60NH02L | |
9 | B6101 |
NEC |
(UPB6100 Series) Bipolar TTL Gate Arrays | |
10 | B612-2T |
HBControls |
SCR / DIODE Modules | |
11 | B612F-2 |
Crydom |
SCR / DIODE Modules | |
12 | B612F-2T |
Crydom |
SCR / DIODE Modules |