of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.
• High-DC current gain due to Darlington connection
• Low collector saturation voltage
• Low collector cutoff current
• Ideal for use in direct drive from IC output for magnet drivers such as treminal equipment or cash registers
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Base current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)
* IB(DC) PT (Ta = 25°C) PT (Tc = 25°C) T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B600 |
SavantIC |
2SB600 | |
2 | B6010D |
BiTEK |
N-channel MOSFET | |
3 | B6010K |
BiTEK |
N-channel MOSFET | |
4 | B6010S |
BiTEK |
Single N-channel MOSFET | |
5 | B6020S |
BiTEK |
Dual N-Channel MOSFET | |
6 | B605 |
NEC |
2SB605 | |
7 | B60NF06L |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | B60NH02L |
STMicroelectronics |
STB60NH02L | |
9 | B6101 |
NEC |
(UPB6100 Series) Bipolar TTL Gate Arrays | |
10 | B612-2T |
HBControls |
SCR / DIODE Modules | |
11 | B612F-2 |
Crydom |
SCR / DIODE Modules | |
12 | B612F-2T |
Crydom |
SCR / DIODE Modules |