B60NH02L - STMicroelectronics

B60NH02L STB60NH02L

oThe STB60NH02L utilizes the latest advanced design srules of ST’s proprietary STripFET™ technology. This is bsuitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. ) - OAPPLICATIONS t(s■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES 3 1 D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIA.

Features

ain-source Voltage Rating 30 V VDS Drain-source Voltage (VGS = 0) 24 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 24 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 60 A ID Drain Current (continuous) at TC = 100°C 43 A IDM(2) Drain Current (pulsed) 240 A Ptot Total Dissipation at TC = 25°C 70 W Derating Factor 0.47 W/°C EAS (3) Single Pulse Avalanche Energy 280 mJ Tstg Storage Temperature Tj Max. Operating Junction Temperature -55 to 175 °C May 2004 1/11 STB60NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Therm.