B6010K - BiTEK

B6010K N-channel MOSFET

The B6010K is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and ot.

Features

RDS(ON)=90mΩ@VGS=10V RDS(ON)=120mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) ℃TA=25 Maximum Power Dissipation ℃TA=70 Operating Junction Temperature Thermal Resi.