·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 260 W TJ Max. Opera.
·Drain Current
–ID=12A@ TC=25℃
·Drain Source Voltage-
: VDSS=800V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.75Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Pluse
48
A
PD
Total Dissipation @TC=25℃
260
W
TJ
Ma.
APT8075BVR 800V 12A 0.750Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode po.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT8075BVFR |
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2 | APT8075BN |
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3 | APT8011JFLL |
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8 | APT8014L2LL |
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12 | APT8018L2VR |
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