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APT8075BVR |
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| Part Number | APT8075BVR |
| Manufacturer | Advanced Power Technology |
| Description | APT8075BVR 800V 12A 0.750Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing de... |
| Features |
epetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 12 0.75 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5608 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) G... |
| Document |
 APT8075BVR Data Sheet
PDF 62.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | APT8075BVFR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
|
| 2 | APT8075BVR |
INCHANGE |
N-Channel MOSFET |
|
| 3 | APT8075BN |
Advanced Power Technology |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
|
| 4 | APT8011JFLL |
Advanced Power Technology |
Power MOSFET |
|
| 5 | APT8011JLL |
Advanced Power Technology |
Power MOSFET |
|