APT8018L2VR - Advanced Power Technology

APT8018L2VR Power MOSFET

APT8018L2VR 800V 43A 0.180W POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-264 Max • TO-264 MAX Package • Faste.

Features

OR V AD INF 800 43 172 ±30 ±40 830 6.64 300 43 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 800 43 0.180 25 250 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts 050-5992 rev- 2-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate V.