APT8075BVFR 800V 12A 0.750Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body D.
ts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 960 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 800 12 0.75 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts 050-5632 Rev - Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT8075BVR |
Advanced Power Technology |
Power MOSFET | |
2 | APT8075BVR |
INCHANGE |
N-Channel MOSFET | |
3 | APT8075BN |
Advanced Power Technology |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
4 | APT8011JFLL |
Advanced Power Technology |
Power MOSFET | |
5 | APT8011JLL |
Advanced Power Technology |
Power MOSFET | |
6 | APT8014JFLL |
Advanced Power Technology |
Power MOSFET | |
7 | APT8014JLL |
Advanced Power Technology |
Power MOSFET | |
8 | APT8014L2FLL |
Advanced Power Technology |
Power MOSFET | |
9 | APT8014L2LL |
Advanced Power Technology |
Power MOSFET | |
10 | APT8015JVFR |
Advanced Power Technology |
Power MOSFET | |
11 | APT8015JVR |
Advanced Power Technology |
Power MOSFET | |
12 | APT8018JN |
Advanced Power Technology |
Power MOSFET |