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APT8075BVR |
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| Part Number | APT8075BVR |
| Manufacturer | INCHANGE |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Sourc... |
| Features |
·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.75Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 260 W TJ Ma... |
| Document |
 APT8075BVR Data Sheet
PDF 369.91KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | APT8075BVFR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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| 2 | APT8075BVR |
Advanced Power Technology |
Power MOSFET |
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| 3 | APT8075BN |
Advanced Power Technology |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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| 4 | APT8011JFLL |
Advanced Power Technology |
Power MOSFET |
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| 5 | APT8011JLL |
Advanced Power Technology |
Power MOSFET |
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