APT8014L2LL 800V 52A 0.140W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching s.
ange Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T IO E T C MA N A OR V AD INF 52 208 ±30 ±40 890 7.12 300 52 50 (Repetitive and Non-Repetitive) 1 4 800 Volts Watts W/°C °C Amps mJ -55 to 150 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 800 52 0.140 100 500 ±100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT8014L2FLL |
Advanced Power Technology |
Power MOSFET | |
2 | APT8014JFLL |
Advanced Power Technology |
Power MOSFET | |
3 | APT8014JLL |
Advanced Power Technology |
Power MOSFET | |
4 | APT8011JFLL |
Advanced Power Technology |
Power MOSFET | |
5 | APT8011JLL |
Advanced Power Technology |
Power MOSFET | |
6 | APT8015JVFR |
Advanced Power Technology |
Power MOSFET | |
7 | APT8015JVR |
Advanced Power Technology |
Power MOSFET | |
8 | APT8018JN |
Advanced Power Technology |
Power MOSFET | |
9 | APT8018L2VR |
Advanced Power Technology |
Power MOSFET | |
10 | APT801R2AN |
Advanced Power Technology |
Power MOSFET | |
11 | APT801R2BN |
Advanced Power Technology |
Power MOSFET | |
12 | APT801R2CN |
Advanced Power Technology |
Power MOSFET |