APT8018JN - Advanced Power Technology

APT8018JN Power MOSFET

D S G D S G S SO 2 T- 27 APT8018JN 800V 40A 0.18Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor 1 SINGLE D.

Features

ource On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 5.0mA) 2 RDS(ON) APT8018JN 0.18 Ohms IDSS IGSS VGS(TH) 250 1000 ± 100 2 4 µA nA Volts THERMAL CHARACTERISTICS Symbol RΘJC RΘCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT °C/W 050-8038 Rev E 0.18 0.05 CAUTION: These Devices a.