AON6414A - Alpha & Omega Semiconductors

AON6414A 30V N-Channel MOSFET

Product Summary The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 30A < 8mW < 10.5mW 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1.

Features

2.5 2.3 1.5 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 17 44 Maximum Junction-to-Case Steady-State RqJC 3.4 Max 21 53 4 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.4.1: January 2024 www.aosmd.com Page 1 of 6 AON6414A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ.