AON6410 - Alpha & Omega Semiconductors

AON6410 N-Channel MOSFET

The AON6410 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS (V) = 30V ID = 24A (VGS = 10V) RDS(ON) < 12mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View PIN1 .

Features

Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 53 2.6 Max 30 64 3.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6410 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source .