AON6404A - Alpha & Omega Semiconductors

AON6404A N-Channel MOSFET

Product Summary The AON6404A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ESD protected 100% UIS Tested 100% Rg Tested 30V 85A < 2.3mΩ < 3.0mΩ Top View DF.

Features

-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Maximum 30 ±20 85 67 280 25 19 60 180 83 33 2.3 1.4 -55 to 150 Typ Max 14 17 40 55 0.85 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: November 2013 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate.