AON6413 - Alpha & Omega Semiconductors

AON6413 30V P-Channel MOSFET

• Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • System/Load Switch, Battery Switch Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested -30V -32A < 8.5mΩ < 17mΩ.

Features

ower Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -32 -25 -128 -22 -17 -40 80 -36 48 19 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 2.1 Max 20 50 2.6 Units °C/W °C/W °C/W Rev.2.0: July 2017 www.aosmd.com Page 1 of 6 AON6413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS D.