AON6414 - Alpha & Omega Semiconductors

AON6414 N-Channel MOSFET

Product Summary The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 30A < 10.5mΩ < 17mΩ Top View DFN5X6 Bottom V.

Features

r Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 53 2.6 Max 30 64 3.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 4: March 2011 www.aosmd.com Page 1 of 6 AON6414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage VDS=30V, VGS=0V VDS=0V, VGS= ±20.