AON6400 - Alpha & Omega Semiconductors

AON6400 N-Channel MOSFET

The AON6400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 1.4mΩ < 1.8mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View .

Features

PD PDSM TJ, TSTG Maximum 30 ±20 85 67 400 31 25 90 405 83 33 2.3 1.45 -55 to 150 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 1 : November 2010 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6400 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Tr.