AON6411 - Alpha & Omega Semiconductors

AON6411 N-Channel MOSFET

The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) -20 -85A < 2.1mΩ < 2.5mΩ < 3.6mΩ 100% UIS Tested 100% Rg.

Features

nd Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 0.6 Max 17 55 0.8 Units ° C/W ° C/W ° C/W Rev 0: Jan. 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6411 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS=±12V VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) Static Drain-Source On-Resist.