logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Preview

3SK296 - Renesas

Download Datasheet
Stock / Price

3SK296 N-Channel Dual-Gate MOSFET

.

Features

.

The same part from a different manufacturer

Datasheet 3SK296 - Hitachi Semiconductor 3SK296

3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise.

Related Product

No. Partie # Fabricant Description Fiche Technique
1 3SK290
Hitachi Semiconductor
Silicon N-Channel Dual Gate MOS FET Datasheet
2 3SK291
Toshiba Semiconductor
Silicon N-Channel Dual Gate MOS Type FET Datasheet
3 3SK292
Toshiba Semiconductor
Silicon N-Channel Dual Gate MOS Type FET Datasheet
4 3SK293
Toshiba Semiconductor
Silicon N-Channel Dual Gate MOS Type FET Datasheet
5 3SK294
Toshiba Semiconductor
Silicon N-Channel Dual Gate MOS Type FET Datasheet
6 3SK295
Hitachi Semiconductor
Silicon N-Channel Dual Gate MOS FET Datasheet
7 3SK297
Hitachi Semiconductor
Silicon N-Channel Dual Gate MOS FET Datasheet
8 3SK298
Hitachi Semiconductor
Silicon N-Channel Dual Gate MOS FET Datasheet
9 3SK299
NEC
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD Datasheet
10 3SK206
NEC
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD Datasheet
11 3SK207
Toshiba Semiconductor
Silicon N Channel Dual Gate MOS Type FET Datasheet
12 3SK22
Toshiba
Silicon N-Channel Transistor Datasheet
More datasheet from Renesas
Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact