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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • • • • Suitable for Low Crss: High GPS: Low NF: use as RF amplifier in UHF TV tuner. 0.02 pF TYP. 20 dB TYP. 1.1 dB TYP. 2.9±0.2 PACKAGE DIMENSIONS in millimeters 0.4 –0.05 1.5 +0.2 –0.1 2.8 –0.3 +0.2 2 0..
•
•
•
• Suitable for Low Crss: High GPS: Low NF: use as RF amplifier in UHF TV tuner. 0.02 pF TYP. 20 dB TYP. 1.1 dB TYP.
2.9±0.2
PACKAGE DIMENSIONS in millimeters
0.4
–0.05
1.5 +0.2
–0.1 2.8
–0.3
+0.2
2
0.95
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 10
–4.5
–4.5 80 200 125
–55 to +125 V V V mA mW °C °C
3
(1.9)
0.95
1
+0.1
–0.05
4
5°
5°
1.1 +0.2
–3.1
0.8
0.4 +0.1
–0.05
0.6
5° 1. 2. 3. 4.
0 to 0.1
5°
E.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 2 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 3 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 4 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 5 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 6 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 7 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 8 | 3SK227 |
Panasonic |
Silicon N-Channel 4-pin MOSFET |
|
| 9 | 3SK228 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused |
|
| 10 | 3SK231 |
NEC |
MOSFET |
|
| 11 | 3SK233 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 12 | 3SK239A |
Hitachi Semiconductor |
GaAs Dual Gate MES FET |
|