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3SK296 |
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| Part Number | 3SK296 |
| Manufacturer | Hitachi Semiconductor |
| Description | 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Out... |
| Features |
• Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transist... |
| Document |
 3SK296 Data Sheet
PDF 50.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3SK290 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 2 | 3SK291 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 3 | 3SK292 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 4 | 3SK293 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 5 | 3SK294 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|