DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP. • 4 PIN SMALL MINI MOLD PACKAGE PACKAGE DIMENSIONS in millimeters 0.3 +0.1 –.
• Suitable for use as RF amplifier in UHF TV tuner.
• Low Crss : 0.02 pF TYP.
• High GPS : 20 dB TYP.
• Low NF : 1.1 dB TYP.
• 4 PIN SMALL MINI MOLD PACKAGE
PACKAGE DIMENSIONS
in millimeters
0.3 +0.1
–0.05 0.3 +0.1
–0.05 3 4 0.3 +0.1
–0.05 0.15 +0.1
–0.05 (1.3) 1 0.9±0.1 0.3 0.4 +0.1
–0.05 VDS = 13 V, VG1S =
–4 V, VG2S = 0 VDS = 5 V, VG2S = 0, VG1S = 0 VDS = 5 V, VG2S = 0 , ID = 100 µA VDS = 5 V, VG1S = 0, ID = 100 µA VDS = 0, VG1S =
–4 V, VG2S = 0 VDS = 0, VG2S =
–4 V, VG1S = 0 VDS = 5 V, VG2S = 1 V, ID = 10 mA f = 1.0 kHz VDS = 5 V, VG2S = 1 V, ID = 10 mA f = 1 MHz VDS = 5 V, VG2S = 1 V, ID.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3SK290 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET | |
2 | 3SK291 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET | |
3 | 3SK292 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET | |
4 | 3SK293 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET | |
5 | 3SK294 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET | |
6 | 3SK295 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET | |
7 | 3SK296 |
Hitachi Semiconductor |
Silicon N-Channel Dual-Gate MOSFET | |
8 | 3SK296 |
Renesas |
N-Channel Dual-Gate MOSFET | |
9 | 3SK297 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET | |
10 | 3SK298 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET | |
11 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD | |
12 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |