3SK298 - Hitachi Semiconductor

3SK298 Silicon N-Channel Dual Gate MOS FET

3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source volt.

Features

• Low noise figure. NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation Outline CMPAK
  –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150
  –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transist.