Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
3SK207 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK207 TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF (typ.) · Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltag.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 2 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 3 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 4 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 5 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 6 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 7 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 8 | 3SK227 |
Panasonic |
Silicon N-Channel 4-pin MOSFET |
|
| 9 | 3SK228 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused |
|
| 10 | 3SK231 |
NEC |
MOSFET |
|
| 11 | 3SK233 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 12 | 3SK239A |
Hitachi Semiconductor |
GaAs Dual Gate MES FET |
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