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3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF (typ.) • Low noise figure: NF = 1.4dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source v.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK290 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 2 | 3SK291 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 3 | 3SK292 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 4 | 3SK293 |
Toshiba Semiconductor |
Silicon N-Channel Dual Gate MOS Type FET |
|
| 5 | 3SK295 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 6 | 3SK296 |
Hitachi Semiconductor |
Silicon N-Channel Dual-Gate MOSFET |
|
| 7 | 3SK296 |
Renesas |
N-Channel Dual-Gate MOSFET |
|
| 8 | 3SK297 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 9 | 3SK298 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 10 | 3SK299 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD |
|
| 11 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 12 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|