30N20G - ON Semiconductor

30N20G Power MOSFET

NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Pb−Free Package is Available* Applications • PWM Motor Controls • Power Supplies • Converte.

Features

• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and RDS(on) Specified at Elevated Temperature
• Pb−Free Package is Available
* Applications
• PWM Motor Controls
• Power Supplies
• Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1) Total Power Dissipation @ TA = 25°C Derate above 25°C.