·Collector-Emitter sustaining Voltage : VCEO=60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V.
ration Voltage IC= 3A; IB= 375mA ICEO Collector Cutoff Current VCE= 30V ; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE-1 DC Current Gain IC=20mA ; VCE=4V hFE-2 DC Current Gain IC=1A ; VCE=4V 2ST31A MIN TYP. MAX UNIT 60 V 1.2 V 1.45 V 0.3 mA 1.0 mA 100 150 25 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not .
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows high gain perf.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2ST3360K |
STMicroelectronics |
NPN/PNP transistors | |
2 | 2ST1480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
3 | 2ST15300 |
STMicroelectronics |
Rad-Hard NPN bipolar transistors | |
4 | 2ST2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
5 | 2ST2480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
6 | 2ST501T |
INCHANGE |
NPN Transistor | |
7 | 2ST5949 |
STMicroelectronics |
NPN Transistor | |
8 | 2STA1694 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
9 | 2STA1695 |
ST Microelectronics |
High power PNP epitaxial planar bipolar transistor | |
10 | 2STA1943 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
11 | 2STA1962 |
ST Microelectronics |
High power PNP epitaxial planar bipolar transistor | |
12 | 2STA2120 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor |