2STA2120 - STMicroelectronics

2STA2120 High power PNP epitaxial planar bipolar transistor

Figure 1. The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Internal schematic diagram Table 1. Device summary Marking 2STA2120 Package TO-3P Packaging Tube Order code 2STA2120 May 2008 Rev 2 1/8 www.st.com 8 This is prelimina.

Features

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■ High breakdown voltage VCEO = 250 V Complementary to 2STC5948 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC 3 2 1 Applications
■ Audio power amplifier TO-3P Description Figure 1. The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Internal schematic diagram Table 1. Device summary Marking 2STA2120 Package TO-3P Packaging Tube Order code 2STA2120 May 2008 Rev 2 1/8 www.st.com 8 This is preliminary information on a new product.