2ST1480 - ST Microelectronics

2ST1480 (2ST1480 / 2ST2480) Complementary power transistors

The devices are manufactured using new “PBHCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. www.DataSheet4U.com Table 1. Device summary Marking 2ST1480 SOT-32FP 2ST2480 2ST2480 Bag Package Packaging Order codes 2ST1480 October 2009 Doc ID 163.

Features

■
■
■
■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Fully insulated package 2 1 Applications
■
■
■
■ 3 Voltage regulation Computer and peripheral equipment Audio amplifier Relay driver Figure 1. Internal schematic diagrams SOT-32FP Description The devices are manufactured using new “PBHCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. www.DataSheet4U.com Table 1. Device summary Marking 2ST1480 SOT-32FP 2ST2480 2ST2480 Bag.