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·Low Collector Saturation Voltage ·High DC Current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V V.
CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 150mA; IC= 0 VCEO(sus) Collector-Emitter Voltage (IB = 0 ) Sustaining IC = 10 mA, ICEO Collector Cut-off Current (IB = 0) VCE = 300 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 2A; VCE= 2V IC= 2A; IB= 2mA IC= 2A; IB= 2mA MIN TYP. MAX UNIT 6 V 330 V 0.1 mA 0.1 mA 2 mA 2000 1.5 V 2.0 V N.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2ST5949 |
STMicroelectronics |
NPN Transistor |
|
| 2 | 2ST1480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors |
|
| 3 | 2ST15300 |
STMicroelectronics |
Rad-Hard NPN bipolar transistors |
|
| 4 | 2ST2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor |
|
| 5 | 2ST2480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors |
|
| 6 | 2ST31A |
STMicroelectronics |
Low voltage NPN power transistor |
|
| 7 | 2ST31A |
INCHANGE |
NPN Transistor |
|
| 8 | 2ST3360K |
STMicroelectronics |
NPN/PNP transistors |
|
| 9 | 2STA1694 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor |
|
| 10 | 2STA1695 |
ST Microelectronics |
High power PNP epitaxial planar bipolar transistor |
|
| 11 | 2STA1943 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor |
|
| 12 | 2STA1962 |
ST Microelectronics |
High power PNP epitaxial planar bipolar transistor |
|