2ST3360K - STMicroelectronics

2ST3360K NPN/PNP transistors

The 2ST3360K is a dual NPN and PNP bipolar transistor developed from ST’s RadHard high current density technology and housed in Flat-8 hermetic package. Both NPN and PNP transistors offer linear and complementary behavior, fast switching and best in class radiation hardness performance. Specifically designed for aerospace applications and suitable for power .

Features

Polarity V(BR)CEO IC (max.) hFE NPN 60 V 0.8 A 160 PNP -60 V -0.8 A 160 1. at IC = 1 A and VCE = 2 V
• 100 krad
• Linear gain characteristics
• ESCC qualified Description The 2ST3360K is a dual NPN and PNP bipolar transistor developed from ST’s RadHard high current density technology and housed in Flat-8 hermetic package. Both NPN and PNP transistors offer linear and complementary behavior, fast switching and best in class radiation hardness performance. Specifically designed for aerospace applications and suitable for power MOSFET driver and high peak output current application.