2ST5949 - STMicroelectronics

2ST5949 NPN Transistor

le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour. 1 2 TO-3 Figure 1. Internal schematic diagram Obsolete Product(s) - O Table 1. Device summary Order code Marking Package Packaging 2ST5949 2ST5949 TO-3 tray Novemb.

Features

■ High breakdown voltage VCEO = 250 V
■ Complementary to 2ST2121
■ Typical ft = 25 MHz t(s)
■ Fully characterized at 125 oC uc Application rod
■ Audio power amplifier te P Description le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology. The resulting transistor b shows good gain linearity behaviour. 1 2 TO-3 Figure 1. Internal schematic diagram Obsolete Product(s) - O Table 1. Device summary Order code Marking Package Packaging 2ST5949 2ST5949 TO-3 tray November 2008 Rev 4 1/8 www.st.com 8 Absolute maximum .