This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code 2STA1962 Marking 2STA1962 Package TO-3P Packaging Tube September 2007 Rev1 1/8 www.st.com 8 This is pr.
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High breakdown voltage VCEO > -230V Complementary to 2STC5242 Fast-switching speed Typical fT= 30MHz
3 2 1
Application
Audio power amplifier
TO-3P
Description
This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code 2STA1962 Marking 2STA1962 Package TO-3P Packaging Tube
September 2007
Rev1
1/8
www.st.com 8
This is preliminary information on a new product now in development or undergoin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2STA1943 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
2 | 2STA1694 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
3 | 2STA1695 |
ST Microelectronics |
High power PNP epitaxial planar bipolar transistor | |
4 | 2STA2120 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
5 | 2STA2121 |
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High power PNP epitaxial planar bipolar transistor | |
6 | 2STA2510 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
7 | 2ST1480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
8 | 2ST15300 |
STMicroelectronics |
Rad-Hard NPN bipolar transistors | |
9 | 2ST2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
10 | 2ST2480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
11 | 2ST31A |
STMicroelectronics |
Low voltage NPN power transistor | |
12 | 2ST31A |
INCHANGE |
NPN Transistor |