2SK222 - Sanyo Semicon Device

2SK222 N-Channel Junction Silicon FET

Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Large yfs. · Low gate leakage current. Package Dimensions unit:mm 2019B [2SK222] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 0.44 Specifications 123 1.3 1.3 1 : Source 2 : Gate 3 : Drain SANYO : NP JEDEC :.

Features

· Ultralow noise figure.
· Large yfs.
· Low gate leakage current. Package Dimensions unit:mm 2019B [2SK222] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 0.44 Specifications 123 1.3 1.3 1 : Source 2 : Gate 3 : Drain SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG PD Tj Tstg Conditions Ratings 40
  –40 10 300 125
  –40 to +125 Unit V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symb.