2SK2208 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 900 ± 30 ±5 ± 20 75 (Tc = 25ºC) 400 5 150 –55 to +150 (Ta = 25ºC) External dimensions 2 ...... FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss Crss t on t off 2.0 2.0 3.0 3.0 2.5 1000 190 90 60 155 3.0 min 900 ± 10.
Ω)
I D (A)
I D (A)
2
5V
1
4.5V 4V 0 5 10 15 20
0
0
1
2
3
4
5
VDS (V)
VGS (V)
I D (A)
I D — Re (yfs) Characteristics
5 3 TC =
– 55ºC 25ºC 125ºC 20
VGS — VDS Characteristics
10 8 15
TC — RDS (ON) Characteristics
ID = 2.5A VGS =10V
RDS (ON) (Ω)
Re (yfs) (S)
ID = 5A
VDS (V)
6 4 2 0
10 ID = 2.5A 5
1
0.5 0.3 0.05 0.1 0
0.5
1
5
5
10
20
–50
0
50
100
150
I D (A)
VGS (V)
Tc (ºC)
VDS — Capacitance Characteristics
5000 VGS = 0V f = 1MHz Ciss 5 4 3
VSD — I DR Characteristics
50
Safe Operating Area
ID (pulse) max 10 5 ID max L
RD
S ( ) ON
(Tc = 25ºC)
10
Ta — PD .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
2 | 2SK2201 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor | |
3 | 2SK2202 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
4 | 2SK2203 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
5 | 2SK2207 |
Sanken electric |
MOSFET | |
6 | 2SK2209-01R |
Fuji Electric |
Power MOSFET | |
7 | 2SK2210 |
Panasonic |
Silicon N-Channel Power F-MOS | |
8 | 2SK2211 |
Panasonic Semiconductor |
Silicon N-Channel MOS FET | |
9 | 2SK2212 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
10 | 2SK2213-01L |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2213-01S |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK2215-01L |
Fuji Electric |
N-channel MOS-FET |